september 2011 doc id 16007 rev 2 1/7 7 1N5822U aerospace 40 v power schottky rectifier features aerospace applications surface mount hermetic package high thermal conduct ivity materials very small conduction losses negligible switching losses extremely fast switching low forward voltage drop package weight: 0.18 g target radiation qualification ? 150 krad (si) low dose rate ? 3 mrad (si) high dose rate escc qualified description this power schottky rectifier is designed and packaged to comply with the escc5000 specification for aerospace products. it is housed in a surface mount hermetically sealed lcc2b package whose footprint is 100% compatible with industry standard solutions in d5b. the 1N5822U is suitable for switching mode power supplies and high frequency dc to dc converters such as low voltage high frequency inverter, free wheeling or polarity protection. a k k a lcc2b table 1. device summary (1) 1. contact st sales office for information about the specific conditions for products in die form and gold plated versions. order code escc detailed specification quality level lead finish eppl i f(av) v rrm t j(max) v f (max) 1N5822Ub1 - engineering model gold plated - 3 a 40 v 150 c 0.47 v 1N5822U02b 5106/020/02 flight part solder dip y www.st.com
characteristics 1N5822U 2/7 doc id 16007 rev 2 1 characteristics to evaluate the conduction losses use the following equation: p = 0.32 x i f(av) + 0.050 i f 2 (rms ) table 2. absolute ratings (limiting values) symbol parameter value unit v rrm repetitive peak reverse voltage 40 v i f(rms) forward rms current 10 a i f(av) average forward rectified current t c = 135 c , = 0.5 3 a i fsm forward surge current t p = 10 ms sinusoidal 80 a t stg storage temperature range -65 to + 150 c t j maximum operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink 150 c t sol maximum soldering temperature (2) 2. maximum duration 5 s. the same package must not be resoldered until 3 minutes have elapsed. 245 c table 3. thermal resistance symbol parameter value unit r th (j-c) junction to case 7 c/w table 4. static electrical characteristics symbol parameter tests conditions min. typ. max. unit i r (1) 1. pulse test : tp = 5 ms, < 2% reverse current t j = -55 c v r = 40 v --40 a t j = 25 c - - 80 t j = 100 c - - 12 ma v f (2) 2. pulse test : tp = 680 s, < 2% forward voltage t j = 25 c i f = 1a - - 0.4 v t j = -55 c i f = 3 a - - 0.56 t j = 25 c - - 0.485 t j = 100 c - - 0.455 t j = 25 c i f = 9.4 a - - 0.70 table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c j diode capacitance v r = 5 v, f = 1 mhz - - 240 pf dptot dtj --------------- 1 rth j a ? () ------------------------- - <
1N5822U characteristics doc id 16007 rev 2 3/7 figure 1. average forward power dissipation versus average forward current figure 2. average forward current versus ambient temperature ( = 0.5) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 =0.05 =0.1 d =0.2 =0.5 =1 t =tp/t tp if(av) (a) pf(av)(w) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 r th(j-a) =r th(j-c) t =tp/t tp r th(j-a) =120 c/w if(av)(a) tamb(c) figure 3. non repetitive surge peak forward current versus overload duration (maximum values) figure 4. relative variation of thermal impedance junction to case versus pulse duration 0 5 10 15 20 25 30 35 40 45 50 1.e-03 1.e-02 1.e-01 1.e+00 t c =25 c t c =75 c t c =125 c i m t =0.5 t(s) im(a) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse zth(j-c)/rth(j-c) tp(s) figure 5. reverse leakage current versus reverse voltage applied (typical values) figure 6. forward voltage drop versus forward current (typical values) 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 5 10 15 20 25 30 35 40 t j =125c t j =25c t j =50c t j =75c t j =100c t j =150c ir(ma) vr(v) 0.01 0.10 1.00 10.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t j =25c t j =125c t j =100c vfm(v) ifm(a)
characteristics 1N5822U 4/7 doc id 16007 rev 2 figure 7. non repetitive surge peak forward current versus number of cycles 0 20 40 60 80 100 1 10 100 1000 f=50 hz t j initial =25c number of cycles ifsm(a)
1N5822U package information doc id 16007 rev 2 5/7 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. leadless chip carrier 2 (lcc2b) package dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a (1) 1. measurement prior to solder coating the mounting pads on bottom of package 2.04 2.23 2.42 0. 080 0.088 0.095 b 5.27 5.4 5.6 0.207 0.213 0.220 c 3.49 3.62 3.82 0.137 0.143 0.150 d 1.71 1.90 2.09 0.067 0.075 0.082 e 0.48 - 0.71 0.019 - 0.028 f-1.4- -0.055- g - 3.32 - - 0.131 - h - 1.82 - - 0.072 - i - 0.15 - - 0.006 - r1 - 0.15 - - 0.006 - r2 - 0.20 - - 0.008 - note 1: the anode is identified by metallization in two top internal angles and the index mark. pin 2 cathode pin 1 anode 2 1 2 1 r2 r1 g i h e e note 1 note 1 note 1 f d a b c
ordering information 1N5822U 6/7 doc id 16007 rev 2 3 ordering information 4 revision history table 7. ordering information (1) 1. contact st sales office for information about the sp ecific conditions for produc ts in die form and gold plated versions. order code escc detailed specification package lead finish marking eppl weight packing 1N5822Ub1 - lcc2b gold plated 22ub1 - 0.18 g waffle pack 1N5822U02b 5106/020/02 solder dip 22u02b y table 8. document revision history date revision changes 10-aug-2009 1 first issue. 23-sep-2011 2 updated ta b l e 1 and ta bl e 7 for escc qualification.
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